?2001 fairchild semiconductor corporation 1 www.fairchildsemi.com sgf23n60uf rev. c1 sgf23n60uf ? 600 v pt igbt november 2013 sgf23n60uf 600 v pt igbt general description fairchild?s uf series ig bts provide low conduction and switching losses. uf series is designed for the applications such as general inverters where high speed switching is required feature. features ? 12 a, 600 v, t c = 100c ? low saturation voltage: v ce(sat) = 2.1 v @ i c = 12 a ? typical fall time. . . . . . . . . .220ns at t j = 125c ? high speed switching ? high input impedance application ? general inverter, pfc g c e g c e to-3pf g c e
?2001 fairchild semiconductor corporation 2 www.fairchildsemi.com sgf23n60uf rev. c1 sgf23n60uf ? 600 v pt igbt absolute maximum ratings t c = 25 ? c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics electrical characteristics of igbt t c = 25 ? c unless otherwise noted symbol description sgf23n60uf unit v ces collector-emitter voltage 600 v v ges gate-emitter voltage ? 20 v i c collector current @ t c = 25 ? c23 a collector current @ t c = 100 ? c12 a i cm (1) pulsed collector current 92 a p d maximum power dissipation @ t c = 25 ? c75 w maximum power dissipation @ t c = 100 ? c30 w t j operating junction temperature -55 to +150 ? c t stg storage temperature range -55 to +150 ? c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 ? c symbol parameter typ. max. unit r ? jc thermal resistance, junction-to-case -- 1.6 ? c / w r ? ja thermal resistance, junction-to-ambient -- 40 ? c / w symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector-emitter breakdown voltage v ge = 0 v, i c = 250 ua 600 -- -- v ? b vces / ? t j temperature coeff. of breakdown voltage v ge = 0 v, i c = 1 ma -- 0.6 -- v/ ? c i ces collector cut-off current v ce = v ces , v ge = 0 v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0 v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 12 ma, v ce = v ge 3.5 4.5 6.5 v v ce(sat) collector to emitter saturation voltage i c = 12 a , v ge = 15 v -- 2.1 2.6 v i c = 23 a , v ge = 15 v -- 2.6 -- v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1 mhz -- 720 -- pf c oes output capacitance -- 100 -- pf c res reverse transfer capacitance -- 25 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 12 a, r g = 23 ? , v ge = 15 v, inductive load, t c = 25 ? c -- 17 -- ns t r rise time -- 27 -- ns t d(off) turn-off delay time -- 60 130 ns t f fall time -- 70 150 ns e on turn-on switching loss -- 115 -- uj e off turn-off switching loss -- 135 -- uj e ts total switching loss -- 250 400 uj t d(on) turn-on delay time v cc = 300 v, i c = 12 a, r g = 23 ? , v ge = 15 v , inductive load, t c = 125 ? c -- 23 -- ns t r rise time -- 32 -- ns t d(off) turn-off delay time -- 100 200 ns t f fall time -- 220 250 ns e on turn - on switching loss -- 205 -- uj e off turn - off switching loss -- 320 -- uj e ts total switching loss -- 525 800 uj
?2001 fairchild semiconductor corporation 3 www.fairchildsemi.com sgf23n60uf rev. c1 sgf23n60uf ? 600 v pt igbt 048121620 0 4 8 12 16 20 common emitter t c = 25 24a 12a i c = 6a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0.5 1 10 0 10 20 30 40 50 common emitter v ge = 15v t c = 25 t c = 125 collector current, i c [a] collector - emitter voltage, v ce [v] fig 1. typical output characteristi cs fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 048121620 0 4 8 12 16 20 common emitter t c = 125 24a 12a i c = 6a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0 30 60 90 120 150 0 1 2 3 4 24a 12a i c = 6a common emitter v ge = 15v collector - emitter voltage, v ce [v] case temperature, t c [] 02468 0 20 40 60 80 100 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] 0.1 1 10 100 1000 0 3 6 9 12 15 18 v cc = 300v load current : peak of square wave duty cycle : 50% t c = 100 power dissipation = 16w frequency [khz] load current [a]
?2001 fairchild semiconductor corporation 4 www.fairchildsemi.com sgf23n60uf rev. c1 sgf23n60uf ? 600 v pt igbt 110100200 30 100 1000 eon eoff eon eoff common emitter v cc = 300v, v ge = 15v i c = 12a t c = 25 t c = 125 switching loss [uj] gate resistance, r g [ ? ] 1 10 100 200 50 100 1000 toff tf toff tf common emitter v cc = 300v, v ge = 15v i c = 12a t c = 25 t c = 125 switching time [ns] gate resistance, r g [ ? ] 1 10 100 200 10 100 200 common emitter v cc = 300v, v ge = 15v i c = 12a t c = 25 t c = 125 ton tr switching time [ns] gate resistance, r g [ ? ] fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 4 8 12 16 20 24 50 100 1000 toff tf toff tf common emitter v cc = 300v, v ge = 15v r g = 23 ? t c = 25 t c = 125 switching time [ns] collector current, i c [a] 4 8 12 16 20 24 10 100 200 ton tr common emitter v cc = 300v, v ge = 15v r g = 23 ? t c = 25 t c = 125 switching time [ns] collector current, i c [a] 11030 0 200 400 600 800 1000 1200 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v]
?2001 fairchild semiconductor corporation 5 www.fairchildsemi.com sgf23n60uf rev. c1 sgf23n60uf ? 600 v pt igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 10 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] 1 10 100 1000 0.1 1 10 100 200 safe operating area v ge = 20v, t c = 100 collector current, i c [a] collector-emitter voltage, v ce [v] fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 13. switching loss vs. collector current pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm ? zthjc + t c fig 17. transient thermal impedance of igbt 4 8 12 16 20 24 10 100 1000 eoff eon eon eoff common emitter v cc = 300v, v ge = 15v r g = 23 ? t c = 25 t c = 125 switching loss [uj] collector current, i c [a] 0 1020304050 0 3 6 9 12 15 300 v 200 v v cc = 100 v common emitter r l = 25 ? t c = 25 gate - emitter voltage, v ge [ v ] gate charge, q g [ nc ] 0.3 1 10 100 1000 0.1 1 10 100 300 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50us 100us 1 ? dc operation i c max. (continuous) i c max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v]
?2001 fairchild semiconductor corporation 6 www.fairchildsemi.com sgf23n60uf rev. c1 sgf23n60uf ? 600 v pt igbt mechanical dimensions figure 18. to3pf,molded,3ld,fullpack (ag) package drawings are provided as a service to customers considering fairchil d components. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, wh ich covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/package/pa ckagedetails.html?id=pn_tf3pf-003
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